Saturation of the second harmonic generation from GaAs-filled metallic hole arrays by nonlinear absorption
نویسندگان
چکیده
Jingyu Zhang,1 Li Wang,1 Sanjay Krishna,1 Mansoor Sheik-Bahae,2 and S. R. J. Brueck1,* 1Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106, USA 2Department of Physics and Astronomy, University of New Mexico, 800 Yale Boulevard NE, Albuquerque, New Mexico 87131, USA (Received 19 August 2010; revised manuscript received 31 January 2011; published 25 April 2011)
منابع مشابه
Free carrier induced spectral shift for GaAs filled metallic hole arrays.
For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts...
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